Publication Information

Title:
Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
Type:
Journal
Info:
J. Vac. Sci. Technol. B 18(4), Jul/Aug 2000
Date:
2000-05-12

Author Information

Name Institution
S. M. RossnagelIBM
A. ShermanSherman and Associates
F. TurnerSherman and Associates

Films

Plasma Ta


Plasma Ti


Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy

Substrates

SiO2

Keywords

Interconnect
Diffusion Barrier

Notes

SiO2 substrates cleaned with acetone, alcohol, DI rinse, and nitrogen dry.
Ta and Ti films can rapidly oxidize in air perhaps due to PEALD Ta and Ti not being fully dense.
Calculates increase in via resistance for increasing liner thickness.
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