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Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers

Type:
Journal
Info:
J. Vac. Sci. Technol. B 18(4), Jul/Aug 2000
Date:
2000-05-12
DOI:
http://dx.doi.org/10.1116/1.1305809

Author Information

Name Institution
S. M. RossnagelIBM
A. ShermanSherman and Associates
F. TurnerSherman and Associates

Films

Plasma Ta

Hardware used: Custom
TaCl5, Tantalum Pentachloride
CAS#: 7721-01-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Plasma Ti

Hardware used: Custom
H2, Hydrogen
CAS#: 1333-74-0
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Substrates

SiO2

Notes

SiO2 substrates cleaned with acetone, alcohol, DI rinse, and nitrogen dry.
Ta and Ti films can rapidly oxidize in air perhaps due to PEALD Ta and Ti not being fully dense.
Calculates increase in via resistance for increasing liner thickness.
78