Publication Information

Title: Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers

Type: Journal

Info: J. Vac. Sci. Technol. B 18(4), Jul/Aug 2000

Date: 2000-05-12

DOI: http://dx.doi.org/10.1116/1.1305809

Author Information

Name

Institution

IBM

Sherman and Associates

Sherman and Associates

Films

Plasma Ta using Custom

Deposition Temperature Range N/A

7721-01-9

1333-74-0

Plasma Ti using Custom

Deposition Temperature Range N/A

1333-74-0

7550-45-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Unknown

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

Unknown

Conformality, Step Coverage

SEM, Scanning Electron Microscopy

Unknown

Substrates

SiO2

Keywords

Interconnect

Diffusion Barrier

Notes

SiO2 substrates cleaned with acetone, alcohol, DI rinse, and nitrogen dry.

Ta and Ti films can rapidly oxidize in air perhaps due to PEALD Ta and Ti not being fully dense.

Calculates increase in via resistance for increasing liner thickness.

78



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