Publication Information

Title:
Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
Type:
Journal
Info:
Thin Solid Films 694 (2020) 137752
Date:
2019-12-11

Author Information

Name Institution
Eun-Jin SongKorea Institute of Materials Science
Hyunjin JoKorea Institute of Materials Science
Se-Hun KwonPusan National University
Ji-Hoon AhnHanyang University
Jung-Dae KwonKorea Institute of Materials Science

Films

Plasma TiON


Plasma TiO2


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: Profilometry

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Flat Band Voltage
Analysis: CV, Cyclic Voltammetry

Characteristic: Interface Trap Density
Analysis: CV, Cyclic Voltammetry

Characteristic: Hysteresis
Analysis: CV, Cyclic Voltammetry

Characteristic: Lifetime
Analysis: MDP, Microwave Detected Photoconductivity

Substrates

Si(100)

Keywords

Passivation

Notes

1532