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Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
Type:
Journal
Info:
Solid-State Electronics 114 (2015) 90 - 93
Date:
2015-07-27
Author Information
| Name | Institution |
|---|---|
| Choong-Ki Kim | Korea Advanced Institute of Science and Technology |
| Hyun Jun Ahn | Korea Advanced Institute of Science and Technology |
| Jung Min Moon | Korea Advanced Institute of Science and Technology |
| Sukwon Lee | Korea Advanced Institute of Science and Technology |
| Dong-II Moon | Hynix Semiconductor |
| Jeong Soo Park | Hynix Semiconductor |
| Byung-Jin Cho | Korea Advanced Institute of Science and Technology |
| Yang-Kyu Choi | Korea Advanced Institute of Science and Technology |
| Seok-Hee Lee | Hynix Semiconductor |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: AFM, Atomic Force Microscopy
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Work Function
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Resistivity, Sheet Resistance
Analysis: -
Substrates
| SiO2 |
Notes
| 386 |