Publication Information

Title:
Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
Type:
Journal
Info:
Solid-State Electronics 114 (2015) 90 - 93
Date:
2015-07-27

Author Information

Name Institution
Choong-Ki KimKorea Advanced Institute of Science and Technology
Hyun Jun AhnKorea Advanced Institute of Science and Technology
Jung Min MoonKorea Advanced Institute of Science and Technology
Sukwon LeeKorea Advanced Institute of Science and Technology
Dong-II MoonHynix Semiconductor
Jeong Soo ParkHynix Semiconductor
Byung-Jin ChoKorea Advanced Institute of Science and Technology
Yang-Kyu ChoiKorea Advanced Institute of Science and Technology
Seok-Hee LeeHynix Semiconductor

Films

Plasma TiC


Film/Plasma Properties

Characteristic: Thickness
Analysis: AFM, Atomic Force Microscopy

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Work Function
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Resistivity, Sheet Resistance
Analysis: -

Substrates

SiO2

Keywords

Notes

386