Publication Information

Title: Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition

Type: Journal

Info: Solid-State Electronics 114 (2015) 90 - 93

Date: 2015-07-27

DOI: http://dx.doi.org/10.1016/j.sse.2015.07.011

Author Information

Name

Institution

Korea Advanced Institute of Science and Technology

Korea Advanced Institute of Science and Technology

Korea Advanced Institute of Science and Technology

Korea Advanced Institute of Science and Technology

Hynix Semiconductor

Hynix Semiconductor

Korea Advanced Institute of Science and Technology

Korea Advanced Institute of Science and Technology

Hynix Semiconductor

Films

Plasma TiC using Unknown

Deposition Temperature Range = 250-500C

7550-45-0

75-24-1

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

AFM, Atomic Force Microscopy

Unknown

Thickness

TEM, Transmission Electron Microscope

Unknown

Work Function

C-V, Capacitance-Voltage Measurements

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Unknown

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

Unknown

Resistivity, Sheet Resistance

Unknown

Unknown

Substrates

SiO2

Keywords

Notes

386



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