Publication Information

Title: Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition

Type: Journal

Info: Solid-State Electronics 114 (2015) 90 - 93

Date: 2015-07-27

DOI: http://dx.doi.org/10.1016/j.sse.2015.07.011

Author Information

Name

Institution

Korea Advanced Institute of Science and Technology

Korea Advanced Institute of Science and Technology

Korea Advanced Institute of Science and Technology

Korea Advanced Institute of Science and Technology

Hynix Semiconductor

Hynix Semiconductor

Korea Advanced Institute of Science and Technology

Korea Advanced Institute of Science and Technology

Hynix Semiconductor

Films

Plasma TiC using Unknown

Deposition Temperature Range = 250-500C

7550-45-0

75-24-1

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

AFM, Atomic Force Microscopy

-

Thickness

TEM, Transmission Electron Microscope

-

Work Function

C-V, Capacitance-Voltage Measurements

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

-

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

-

Resistivity, Sheet Resistance

Unknown

-

Substrates

SiO2

Keywords

Notes

386



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