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Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition

Type:
Journal
Info:
Solid-State Electronics 114 (2015) 90 - 93
Date:
2015-07-27
DOI:
http://dx.doi.org/10.1016/j.sse.2015.07.011

Author Information

Name Institution
Choong-Ki KimKorea Advanced Institute of Science and Technology
Hyun Jun AhnKorea Advanced Institute of Science and Technology
Jung Min MoonKorea Advanced Institute of Science and Technology
Sukwon LeeKorea Advanced Institute of Science and Technology
Dong-II MoonHynix Semiconductor
Jeong Soo ParkHynix Semiconductor
Byung-Jin ChoKorea Advanced Institute of Science and Technology
Yang-Kyu ChoiKorea Advanced Institute of Science and Technology
Seok-Hee LeeHynix Semiconductor

Films

Plasma TiC

Hardware used: Unknown
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 250-500C

Film/Plasma Properties

Characteristic: Thickness
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Work Function
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: -
Diagnostic: -

Substrates

SiO2

Notes

386