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Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
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  • Surface cleaning
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Investigation of residual chlorine in TiO2 films grown by Atomic Layer Deposition

Type:
Poster
Info:
JVC-16, EVC-14, CroSloVM-23 2016, Portorož
Date:
2016-05-01
DOI:
http://dx.doi.org/10.13140/RG.2.2.36222.38721

Author Information

Name Institution
Iva SaricUniversity of Rijeka
Robert PeterUniversity of Rijeka
Ivna Kavre PiltaverUniversity of Rijeka
Ivana Jelovica BadovinacUniversity of Rijeka
Mladen PetravicUniversity of Rijeka

Films

Thermal TiO2

Hardware used: Beneq TFS-200
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature Range = 100-250C

Plasma TiO2

Hardware used: Beneq TFS-200
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 40-250C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry
Diagnostic: -

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Substrates

Silicon

Notes

1024