Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate

Type:
Journal
Info:
Electrochemical and Solid-State Letters, 12 (3) H77-H79 (2009)
Date:
2008-12-08
DOI:
http://dx.doi.org/10.1149/1.3059060

Author Information

Name Institution
Daekwon JooKorea Advanced Institute of Science and Technology
Jin-Seong ParkSamsung Display Co.
Sang-Won KangKorea Advanced Institute of Science and Technology

Films

Plasma Ir

Hardware used: Custom Direct Capacitively Coupled Plasma
(ethylcyclopentadienyl) (1, 5-cyclooctodiene) Iridium, Ir(EtCp)(COD)
CAS#: 0-0-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range N/A

Plasma TiO2

Hardware used: Custom Direct Capacitively Coupled Plasma
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Rigaku

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Substrates

Ir

Notes

1181