Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate

Type:
Journal
Info:
Electrochemical and Solid-State Letters, 12 (3) H77-H79 (2009)
Date:
2008-12-08

Author Information

Name Institution
Daekwon JooKorea Advanced Institute of Science and Technology
Jin-Seong ParkSamsung Display Co.
Sang-Won KangKorea Advanced Institute of Science and Technology

Films



Film/Plasma Properties

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Substrates

Ir

Notes

1181