Characteristics of Plasma-Enhanced Atomic-Layer Deposited (PEALD) SnO2 Thin Films

Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 46, No. 4, April 2005, pp. L756-L759
Date:
2005-02-01
DOI:
No DOI

Author Information

Name Institution
Woonyoung LeeChonnam National University
Yongkook ChoiChonnam National University
Kwangjun HongChosun University
Nam-Hoon KimChosun University
Yongju ParkChosun University
Jin-Seong ParkChosun University

Films

Plasma SnO2

Hardware used: Custom
DiButylTinDiAcetate, DBTDA, ((CH3CO2)2Sn[(CH2)3CH3]2)
CAS#: 1067-33-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Substrates

Si(100)

Notes

Films annealed.
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