The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor

Type:
Journal
Info:
Electrochemical and Solid-State Letters, 13 (5) H151-H154 (2010)
Date:
2010-03-04
DOI:
http://dx.doi.org/10.1149/1.3322733

Author Information

Name Institution
S. J. LimPohang University of Science and Technology (POSTECH)
Jae-Min KimYonsei University
Doyoung KimYonsei University
Changsoo LeePohang University of Science and Technology (POSTECH)
Jin-Seong ParkDankook University
Hyungjun KimYonsei University

Films

Plasma ZnO

Hardware used: Custom
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Rudolf AutoEL II

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Measurements
Diagnostic: -

Characteristic: Transfer Curves
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Off Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: On/Off Current Ratio
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Subthreshold Swing
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Mobility
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Threshold Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Substrates

Al2O3
Glass
Corning 1737

Notes

ZnO etched with dilute HCl
48