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Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology
Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
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The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor
Type:
Journal
Info:
Electrochemical and Solid-State Letters, 13 (5) H151-H154 (2010)
Date:
2010-03-04
Author Information
| Name | Institution |
|---|---|
| S. J. Lim | Pohang University of Science and Technology (POSTECH) |
| Jae-Min Kim | Yonsei University |
| Doyoung Kim | Yonsei University |
| Changsoo Lee | Pohang University of Science and Technology (POSTECH) |
| Jin-Seong Park | Dankook University |
| Hyungjun Kim | Yonsei University |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Measurements
Characteristic: Transfer Curves
Analysis: I-V, Current-Voltage Measurements
Characteristic: Off Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: On/Off Current Ratio
Analysis: I-V, Current-Voltage Measurements
Characteristic: Subthreshold Swing
Analysis: I-V, Current-Voltage Measurements
Characteristic: Mobility
Analysis: I-V, Current-Voltage Measurements
Characteristic: Threshold Voltage
Analysis: I-V, Current-Voltage Measurements
Substrates
| Al2O3 |
| Glass |
| Corning 1737 |
Keywords
| TCO, Transparent Conducting Oxide |
| TFT, Thin Film Transistor |
Notes
| ZnO etched with dilute HCl |
| 48 |