Publication Information

Title: Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application

Type: Journal

Info: ACS Appl. Mater. Interfaces, 2016, 8 (40), pp 26924-26931

Date: 2016-09-27

DOI: http://dx.doi.org/10.1021/acsami.6b07332

Author Information

Name

Institution

Korea Research Institute of Chemical Technology

Korea Research Institute of Chemical Technology

Korea Advanced Institute of Science and Technology

Korea Research Institute of Chemical Technology

Korea Research Institute of Chemical Technology

Hanyang University

Sungkyunkwan University

Korea Research Institute of Chemical Technology

Sungkyunkwan University

Korea Research Institute of Chemical Technology

Korea Research Institute of Chemical Technology

Films

Plasma In2O3 using Custom

Deposition Temperature Range = 70-250C

0-0-0

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Horiba Jobin Yvon UVISEL

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

GIXRD, Grazing Incidence X-Ray Diffraction

Rigaku Smartlab

Density

XRR, X-Ray Reflectivity

Rigaku Smartlab

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Veeco Dimension 3100

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Bonding States

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Transmittance

UV-VIS Spectroscopy

Shimadzu UV-1800

Optical Bandgap

UV-VIS Spectroscopy

Shimadzu UV-1800

Refractive Index

UV-VIS Spectroscopy

Shimadzu UV-1800

Carrier Concentration

Hall Measurements

Ecopia HMS-5000

Mobility

Hall Measurements

Ecopia HMS-5000

Resistivity, Sheet Resistance

Hall Measurements

Ecopia HMS-5000

Transistor Characteristics

Transistor Characterization

Unknown

Precursor Characterization

TGA, Thermo Gravimetric Analysis

Unknown

Substrates

Silicon

Glass

Keywords

Notes

Precursor data in supporting document.

947



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