Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application
Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2016, 8 (40), pp 26924-26931
Date:
2016-09-27
Author Information
| Name | Institution |
|---|---|
| Hyo Yeon Kim | Korea Research Institute of Chemical Technology |
| Eun Ae Jung | Korea Research Institute of Chemical Technology |
| Gum Bi Mun | Korea Advanced Institute of Science and Technology |
| Raphael E. Agbenyeke | Korea Research Institute of Chemical Technology |
| Bo Keun Park | Korea Research Institute of Chemical Technology |
| Jin-Seong Park | Hanyang University |
| Seung Uk Son | Sungkyunkwan University |
| Dong Ju Jeon | Korea Research Institute of Chemical Technology |
| Sang-Hee Ko Park | Sungkyunkwan University |
| Taek-Mo Chung | Korea Research Institute of Chemical Technology |
| Jeong Hwan Han | Korea Research Institute of Chemical Technology |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Transmittance
Analysis: UV-VIS Spectroscopy
Characteristic: Optical Bandgap
Analysis: UV-VIS Spectroscopy
Characteristic: Refractive Index
Analysis: UV-VIS Spectroscopy
Characteristic: Carrier Concentration
Analysis: Hall Measurements
Characteristic: Mobility
Analysis: Hall Measurements
Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Measurements
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Characteristic: Precursor Characterization
Analysis: TGA, Thermo Gravimetric Analysis
Substrates
| Silicon |
| Glass |
Notes
| Precursor data in supporting document. |
| 947 |