Publication Information

Title:
Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application
Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2016, 8 (40), pp 26924-26931
Date:
2016-09-27

Author Information

Name Institution
Hyo Yeon KimKorea Research Institute of Chemical Technology
Eun Ae JungKorea Research Institute of Chemical Technology
Gum Bi MunKorea Advanced Institute of Science and Technology
Raphael E. AgbenyekeKorea Research Institute of Chemical Technology
Bo Keun ParkKorea Research Institute of Chemical Technology
Jin-Seong ParkHanyang University
Seung Uk SonSungkyunkwan University
Dong Ju JeonKorea Research Institute of Chemical Technology
Sang-Hee Ko ParkSungkyunkwan University
Taek-Mo ChungKorea Research Institute of Chemical Technology
Jeong Hwan HanKorea Research Institute of Chemical Technology

Films

Plasma In2O3


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Transmittance
Analysis: UV-VIS Spectroscopy

Characteristic: Optical Bandgap
Analysis: UV-VIS Spectroscopy

Characteristic: Refractive Index
Analysis: UV-VIS Spectroscopy

Characteristic: Carrier Concentration
Analysis: Hall Measurements

Characteristic: Mobility
Analysis: Hall Measurements

Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Measurements

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Characteristic: Precursor Characterization
Analysis: TGA, Thermo Gravimetric Analysis

Substrates

Silicon
Glass

Keywords

Notes

Precursor data in supporting document.
947