Plasma-enhanced atomic layer deposited indium oxide film using a novel dimethylbutylamino-trimethylindium precursor for thin film transistors

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 39, 032406 (2021)
Date:
2021-03-01

Author Information

Name Institution
Su-Hwan ChoiHanyang University
Hyun-Jun JeongHanyang University
TaeHyun HongHanyang University
Yong Hwan NaLake Materials
Chi Kwon ParkLake Materials
Myung Yong LimLake Materials
Seong Hoon JeongLake Materials
Jun Hyung LimSamsung Display Co.
Jin-Seong ParkHanyang University

Films

Plasma In2O3

Hardware used: Unknown


CAS#: 7782-44-7

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Precursor Characterization
Analysis: TGA, Thermo Gravimetric Analysis

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Transmittance
Analysis: UV-VIS Spectroscopy

Characteristic: Band Gap
Analysis: UV-VIS Spectroscopy

Characteristic: Carrier Concentration
Analysis: Hall Measurements

Characteristic: Mobility
Analysis: Hall Measurements

Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Measurements

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Substrates

Si(001)

Notes

1637