Publication Information

Title:
High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2
Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 35, NO. 2, PP. 175-177, 2014
Date:
2013-11-28

Author Information

Name Institution
Woojin ChoiSeoul National University
Ogyun SeokSeoul National University
Hojin RyuSeoul National University
Ho-Young ChaHongik University
Kwang-Seok SeoSeoul National University

Films

Plasma SiNx


CAS#: 7803-62-5

CAS#: 7727-37-9

Film/Plasma Properties

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Substrates

GaN
AlGaN

Keywords

Notes

1385