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High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2
Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 35, NO. 2, PP. 175-177, 2014
Date:
2013-11-28
Author Information
| Name | Institution |
|---|---|
| Woojin Choi | Seoul National University |
| Ogyun Seok | Seoul National University |
| Hojin Ryu | Seoul National University |
| Ho-Young Cha | Hongik University |
| Kwang-Seok Seo | Seoul National University |
Films
Plasma SiNx
Film/Plasma Properties
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Substrates
| GaN |
| AlGaN |
Notes
| 1385 |