High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2

Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 35, NO. 2, PP. 175-177, 2014
Date:
2013-11-28
DOI:
http://dx.doi.org/10.1109/LED.2013.2293579

Author Information

Name Institution
Woojin ChoiSeoul National University
Ogyun SeokSeoul National University
Hojin RyuSeoul National University
Ho-Young ChaHongik University
Kwang-Seok SeoSeoul National University

Films

Plasma SiNx

Hardware used: Custom Remote Inductively Coupled Plasma
SiH4, Silane
CAS#: 7803-62-5
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 350C

Film/Plasma Properties

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: -

Substrates

GaN
AlGaN

Notes

1385