Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
Type:
Journal
Info:
Applied Physics Letters 107, 093507 (2015)
Date:
2015-08-24
Author Information
| Name | Institution |
|---|---|
| Tian-Li Wu | IMEC |
| Denis Marcon | IMEC |
| Benoit Bakeroot | IMEC |
| Brice De Jaeger | IMEC |
| H. C. Lin | IMEC |
| Jacopo Franco | IMEC |
| Steve Stoffels | IMEC |
| Marleen Van Hove | IMEC |
| Robin Roelofs | ASM Microchemistry Oy |
| Guido Groeseneken | IMEC |
| Stefaan Decoutere | IMEC |
Films
Plasma SiNx
Film/Plasma Properties
Characteristic: Electrical Properties
Analysis: -
Characteristic: Interface Trap Density
Analysis: -
Characteristic: Threshold Voltage Shift
Analysis: -
Substrates
| AlGaN |
Notes
| 388 |