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Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors
Designing Multifunctional Cobalt Oxide Layers for Efficient and Stable Electrochemical Oxygen Evolution
Hierarchical Atomic Layer Deposited V2O5 on 3D Printed Nanocarbon Electrodes for High-Performance Aqueous Zinc-Ion Batteries
Piezoelectric Properties of Zinc Oxide Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition
Experimental and numerical analysis of the effects of ion bombardment in silicon oxide (SiO2) plasma enhanced atomic layer deposition (PEALD) processes
Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
Type:
Journal
Info:
Applied Physics Letters 107, 093507 (2015)
Date:
2015-08-24
Author Information
| Name | Institution |
|---|---|
| Tian-Li Wu | IMEC |
| Denis Marcon | IMEC |
| Benoit Bakeroot | IMEC |
| Brice De Jaeger | IMEC |
| H. C. Lin | IMEC |
| Jacopo Franco | IMEC |
| Steve Stoffels | IMEC |
| Marleen Van Hove | IMEC |
| Robin Roelofs | ASM Microchemistry Oy |
| Guido Groeseneken | IMEC |
| Stefaan Decoutere | IMEC |
Films
Plasma SiNx
Film/Plasma Properties
Characteristic: Electrical Properties
Analysis: -
Characteristic: Interface Trap Density
Analysis: -
Characteristic: Threshold Voltage Shift
Analysis: -
Substrates
| AlGaN |
Keywords
Notes
| 388 |