Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Type:
Journal
Info:
Applied Physics Letters 107, 093507 (2015)
Date:
2015-08-24
DOI:
http://dx.doi.org/10.1063/1.4930076

Author Information

Name Institution
Tian-Li WuIMEC
Denis MarconIMEC
Benoit BakerootIMEC
Brice De JaegerIMEC
H. C. LinIMEC
Jacopo FrancoIMEC
Steve StoffelsIMEC
Marleen Van HoveIMEC
Robin RoelofsASM Microchemistry Oy
Guido GroesenekenIMEC
Stefaan DecoutereIMEC

Films

Plasma SiNx

Hardware used: Unknown
SiH4, Silane
CAS#: 7803-62-5
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Electrical Properties
Analysis: -
Diagnostic: -

Characteristic: Interface Trap Density
Analysis: -
Diagnostic: -

Characteristic: Threshold Voltage Shift
Analysis: -
Diagnostic: -

Substrates

AlGaN

Keywords

Notes

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