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Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
Plasma enhanced atomic layer deposition of thin film Li1+xMn2-xO4 for realization of all solid-state 3D lithium-ion microbatteries
AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
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Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
Type:
Journal
Info:
Applied Physics Letters 107, 093507 (2015)
Date:
2015-08-24
Author Information
| Name | Institution |
|---|---|
| Tian-Li Wu | IMEC |
| Denis Marcon | IMEC |
| Benoit Bakeroot | IMEC |
| Brice De Jaeger | IMEC |
| H. C. Lin | IMEC |
| Jacopo Franco | IMEC |
| Steve Stoffels | IMEC |
| Marleen Van Hove | IMEC |
| Robin Roelofs | ASM Microchemistry Oy |
| Guido Groeseneken | IMEC |
| Stefaan Decoutere | IMEC |
Films
Plasma SiNx
Film/Plasma Properties
Characteristic: Electrical Properties
Analysis: -
Characteristic: Interface Trap Density
Analysis: -
Characteristic: Threshold Voltage Shift
Analysis: -
Substrates
| AlGaN |
Keywords
Notes
| 388 |
Popular Precursors
Top Authors
| Erwin (W.M.M.) Kessels |
| Hyeongtag Jeon |
| Hyungjun Kim |
| Mauritius C. M. (Richard) van de Sanden |
| Christophe Detavernier |