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The publication database currently has 1658 entries.
204 Films
274 Precursors
78 Dep Hardware Sets
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5093 Authors

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Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy Uniformity of HfO2 Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition Optimization of Y2O3 dopant concentration of yttria stabilized zirconia thin film electrolyte prepared by plasma enhanced atomic layer deposition for high performance thin film solid oxide fuel cells Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy Innovative remote plasma source for atomic layer deposition for GaN devices

Stefaan Decoutere Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications authored by Stefaan Decoutere returned 10 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1AlGaN/GaN power schottky diodes with anode dimension up to 100 mm on 200 mm Si substrate
2Combined PEALD Gate-Dielectric and In-Situ SiN Cap-Layer for Reduced Vth Shift and RDS-ON Dispersion of AlGaN/GaN HEMTs on 200 mm Si Wafer
3Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
4Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs
5Leakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layers
6Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate
7Reliability and parasitic issues in GaN-based power HEMTs: a review
8Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests
9Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
10Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate

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