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An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
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AlGaN/GaN power schottky diodes with anode dimension up to 100 mm on 200 mm Si substrate

Type:
Conference Proceedings
Info:
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Date:
2016-06-12
DOI:
http://dx.doi.org/10.1109/ISPSD.2016.7520785

Author Information

Name Institution
Silvia LenciIMEC
Jie HuIMEC
Nicolò RonchiIMEC
Stefaan DecoutereIMEC

Films

Plasma SiNx

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

AlGaN

Notes

838