AlGaN/GaN power schottky diodes with anode dimension up to 100 mm on 200 mm Si substrate
Type:
Conference Proceedings
Info:
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Date:
2016-06-12
Author Information
Name | Institution |
---|---|
Silvia Lenci | IMEC |
Jie Hu | IMEC |
Nicolò Ronchi | IMEC |
Stefaan Decoutere | IMEC |
Films
Film/Plasma Properties
Substrates
AlGaN |
Notes
838 |