Publication Information

Title:
AlGaN/GaN power schottky diodes with anode dimension up to 100 mm on 200 mm Si substrate
Type:
Conference Proceedings
Info:
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Date:
2016-06-12

Author Information

Name Institution
Silvia LenciIMEC
Jie HuIMEC
Nicolò RonchiIMEC
Stefaan DecoutereIMEC

Films

Plasma SiNx

Hardware used: Unknown


Film/Plasma Properties

Substrates

AlGaN

Keywords

Notes

838