Reliability and parasitic issues in GaN-based power HEMTs: a review

Type:
Journal
Info:
2016 Semicond. Sci. Technol. 31, 093004
Date:
2016-06-22
DOI:
http://dx.doi.org/10.1088/0268-1242/31/9/093004

Author Information

Name Institution
Gaudenzio MeneghessoUniversity of Padova
Matteo MeneghiniUniversity of Padova
Isabella RossettoUniversity of Padova
Davide BisiUniversity of Padova
Steve StoffelsIMEC
Marleen Van HoveIMEC
Stefaan DecoutereIMEC
Enrico ZanoniUniversity of Padova

Films

Plasma SiNx

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

GaN

Keywords

Notes

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