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Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
Continuous polymer films deposited on top of porous substrates using plasma-enhanced atomic layer deposition and molecular layer deposition
Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition
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Publication Information
Title:
Reliability and parasitic issues in GaN-based power HEMTs: a review
Type:
Journal
Info:
2016 Semicond. Sci. Technol. 31, 093004
Date:
2016-06-22
Author Information
| Name | Institution |
|---|---|
| Gaudenzio Meneghesso | University of Padova |
| Matteo Meneghini | University of Padova |
| Isabella Rossetto | University of Padova |
| Davide Bisi | University of Padova |
| Steve Stoffels | IMEC |
| Marleen Van Hove | IMEC |
| Stefaan Decoutere | IMEC |
| Enrico Zanoni | University of Padova |
Films
Film/Plasma Properties
Substrates
| GaN |
Keywords
Notes
| 964 |
Popular Precursors
Top Authors
| Erwin (W.M.M.) Kessels |
| Hyeongtag Jeon |
| Hyungjun Kim |
| Mauritius C. M. (Richard) van de Sanden |
| Christophe Detavernier |