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Area-Selective Atomic Layer Deposition of Two-Dimensional WS2 Nanolayers
In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition
Precursor-surface interactions revealed during plasma-enhanced atomic layer deposition of metal oxide thin films by in-situ spectroscopic ellipsometry
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Publication Information
Title:
Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate
Type:
Journal
Info:
Microelectronics Reliability 2015
Date:
2015-11-30
Author Information
| Name | Institution |
|---|---|
| Gaudenzio Meneghesso | University of Padova |
| Matteo Meneghini | University of Padova |
| Davide Bisi | University of Padova |
| Isabella Rossetto | University of Padova |
| Tian-Li Wu | IMEC |
| Marleen Van Hove | IMEC |
| Denis Marcon | IMEC |
| Steve Stoffels | IMEC |
| Stefaan Decoutere | IMEC |
| Enrico Zanoni | University of Padova |
Films
Film/Plasma Properties
Substrates
Keywords
Notes
| 429 |
Popular Precursors
Top Authors
| Erwin (W.M.M.) Kessels |
| Hyeongtag Jeon |
| Hyungjun Kim |
| Mauritius C. M. (Richard) van de Sanden |
| Christophe Detavernier |