Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate

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Publication Information

Title: Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate

Type: Journal

Info: Microelectronics Reliability 2015

Date: 2015-11-30

DOI: http://dx.doi.org/10.1016/j.microrel.2015.11.024

Author Information

Name

Institution

Gaudenzio Meneghesso

University of Padova

Matteo Meneghini

University of Padova

University of Padova

Isabella Rossetto

University of Padova

IMEC

Marleen Van Hove

IMEC

IMEC

IMEC

Stefaan Decoutere

IMEC

University of Padova

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