Publication Information

Title:
Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate
Type:
Journal
Info:
Microelectronics Reliability 2015
Date:
2015-11-30

Author Information

Name Institution
Gaudenzio MeneghessoUniversity of Padova
Matteo MeneghiniUniversity of Padova
Davide BisiUniversity of Padova
Isabella RossettoUniversity of Padova
Tian-Li WuIMEC
Marleen Van HoveIMEC
Denis MarconIMEC
Steve StoffelsIMEC
Stefaan DecoutereIMEC
Enrico ZanoniUniversity of Padova

Films

Plasma SiNx

Hardware used: Unknown


Thermal Al2O3

Hardware used: Unknown


Film/Plasma Properties

Substrates

Keywords

Notes

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