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Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy
Uniformity of HfO2 Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition
Optimization of Y2O3 dopant concentration of yttria stabilized zirconia thin film electrolyte prepared by plasma enhanced atomic layer deposition for high performance thin film solid oxide fuel cells
Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate
Type:
Journal
Info:
Microelectronics Reliability 2015
Date:
2015-11-30
Author Information
| Name | Institution |
|---|---|
| Gaudenzio Meneghesso | University of Padova |
| Matteo Meneghini | University of Padova |
| Davide Bisi | University of Padova |
| Isabella Rossetto | University of Padova |
| Tian-Li Wu | IMEC |
| Marleen Van Hove | IMEC |
| Denis Marcon | IMEC |
| Steve Stoffels | IMEC |
| Stefaan Decoutere | IMEC |
| Enrico Zanoni | University of Padova |
Films
Film/Plasma Properties
Substrates
Keywords
Notes
| 429 |