Publication Information

Title:
Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs
Type:
Journal
Info:
Microelectronics Reliability Volume 55, Issues 9-10, August-September 2015, Pages 1692-1696
Date:
2015-06-29

Author Information

Name Institution
Isabella RossettoUniversity of Padova
Matteo MeneghiniUniversity of Padova
Davide BisiUniversity of Padova
A. BarbatoUniversity of Padova
Marleen Van HoveIMEC
Denis MarconIMEC
Tian-Li WuIMEC
Stefaan DecoutereIMEC
Gaudenzio MeneghessoUniversity of Padova
Enrico ZanoniUniversity of Padova

Films

Plasma SiNx

Hardware used: Unknown


Film/Plasma Properties

Characteristic: Transistor Characteristics
Analysis: -

Substrates

AlGaN
GaN

Keywords

Gate Dielectric

Notes

489