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An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs

Type:
Journal
Info:
Microelectronics Reliability Volume 55, Issues 9-10, August-September 2015, Pages 1692-1696
Date:
2015-06-29
DOI:
http://dx.doi.org/10.1016/j.microrel.2015.06.130

Author Information

Name Institution
Isabella RossettoUniversity of Padova
Matteo MeneghiniUniversity of Padova
Davide BisiUniversity of Padova
A. BarbatoUniversity of Padova
Marleen Van HoveIMEC
Denis MarconIMEC
Tian-Li WuIMEC
Stefaan DecoutereIMEC
Gaudenzio MeneghessoUniversity of Padova
Enrico ZanoniUniversity of Padova

Films

Plasma SiNx

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Transistor Characteristics
Analysis: -
Diagnostic: -

Substrates

AlGaN
GaN

Notes

489