Publication Information

Title:
Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
Type:
Journal
Info:
IEEE Transactions on Electron Devices, Volume:63, Issue:5, 2016
Date:
2016-02-29

Author Information

Name Institution
Tian-Li WuIMEC
Jacopo FrancoIMEC
Denis MarconIMEC
Brice De JaegerIMEC
Benoit BakerootIMEC
Steve StoffelsIMEC
Marleen Van HoveIMEC
Guido GroesenekenIMEC
Stefaan DecoutereIMEC

Films

Plasma SiNx

Hardware used: Unknown


Thermal Al2O3


Film/Plasma Properties

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Substrates

GaN

Keywords

Notes

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