Publication Information

Title:
Combined PEALD Gate-Dielectric and In-Situ SiN Cap-Layer for Reduced Vth Shift and RDS-ON Dispersion of AlGaN/GaN HEMTs on 200 mm Si Wafer
Type:
Journal
Info:
2014 International Conference on Solid State Devices and Materials
Date:
2014-09-08

Author Information

Name Institution
Nicolò RonchiIMEC
Brice De JaegerIMEC
Marleen Van HoveIMEC
Robin RoelofsASM Microchemistry Oy
Tian-Li WuIMEC
Jie HuIMEC
X. KangIMEC
Stefaan DecoutereIMEC

Films

Plasma SiNx

Hardware used: ASM Eagle XP8


Film/Plasma Properties

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Substrates

AlGaN

Keywords

Notes

1009