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Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests
Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 38, NO. 3, PP. 371-374, 2017
Date:
2017-01-27
Author Information
| Name | Institution |
|---|---|
| Jie Hu | IMEC |
| Steve Stoffels | IMEC |
| Ming Zhao | IMEC |
| Andrea Natale Tallarico | University of Bologna |
| Isabella Rossetto | University of Padova |
| Matteo Meneghini | University of Padova |
| Xuanwu Kang | IMEC |
| Benoit Bakeroot | IMEC |
| Denis Marcon | IMEC |
| B. Kaczer | IMEC |
| Stefaan Decoutere | IMEC |
| Guido Groeseneken | IMEC |
Films
Film/Plasma Properties
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Characteristic: Wet Etch Resistance
Analysis: Custom
Characteristic: Chemical Composition, Impurities
Analysis: -
Substrates
Notes
| 1039 |