Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests

Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 38, NO. 3, PP. 371-374, 2017
Date:
2017-01-27
DOI:
http://dx.doi.org/10.1109/LED.2017.2661482

Author Information

Name Institution
Jie HuIMEC
Steve StoffelsIMEC
Ming ZhaoIMEC
Andrea Natale TallaricoUniversity of Bologna
Isabella RossettoUniversity of Padova
Matteo MeneghiniUniversity of Padova
Xuanwu KangIMEC
Benoit BakerootIMEC
Denis MarconIMEC
B. KaczerIMEC
Stefaan DecoutereIMEC
Guido GroesenekenIMEC

Films

Plasma SiNx

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Wet Etch Resistance
Analysis: Custom
Diagnostic: Custom

Characteristic: Chemical Composition, Impurities
Analysis: -
Diagnostic: -

Substrates

Keywords

Notes

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