Publication Information

Title:
Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests
Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 38, NO. 3, PP. 371-374, 2017
Date:
2017-01-27

Author Information

Name Institution
Jie HuIMEC
Steve StoffelsIMEC
Ming ZhaoIMEC
Andrea Natale TallaricoUniversity of Bologna
Isabella RossettoUniversity of Padova
Matteo MeneghiniUniversity of Padova
Xuanwu KangIMEC
Benoit BakerootIMEC
Denis MarconIMEC
B. KaczerIMEC
Stefaan DecoutereIMEC
Guido GroesenekenIMEC

Films

Plasma SiNx

Hardware used: Unknown


Film/Plasma Properties

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Characteristic: Wet Etch Resistance
Analysis: Custom

Characteristic: Chemical Composition, Impurities
Analysis: -

Substrates

Keywords

Notes

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