Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate

Type:
Journal
Info:
IEEE Transactions on Electron Devices, Volume:63, Issue:3, 2016
Date:
2016-01-20
DOI:
http://dx.doi.org/10.1109/TED.2016.2515566

Author Information

Name Institution
Jie HuIMEC
Steve StoffelsIMEC
Silvia LenciIMEC
Benoit BakerootIMEC
Brice De JaegerIMEC
Marleen Van HoveIMEC
Nicolò RonchiIMEC
Rafael VenegasIMEC
Hu LiangIMEC
Ming ZhaoIMEC
Guido GroesenekenIMEC
Stefaan DecoutereIMEC

Films

Plasma SiNx

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Notes

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