Publication Information

Title: Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate

Type: Journal

Info: IEEE Transactions on Electron Devices, Volume:63, Issue:3, 2016

Date: 2016-01-20

DOI: http://dx.doi.org/10.1109/TED.2016.2515566

Author Information

Name

Institution

IMEC

IMEC

IMEC

IMEC

IMEC

IMEC

IMEC

IMEC

IMEC

IMEC

IMEC

IMEC

Films

Plasma SiNx using Unknown

Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

Notes

798



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