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An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
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  • Surface cleaning
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Leakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layers

Type:
Journal
Info:
physica status solidi (a) Volume 213, Issue 5, pages 1229--1235, 2016
Date:
2016-04-13
DOI:
http://dx.doi.org/10.1002/pssa.201532797

Author Information

Name Institution
Jie HuKU Leuven
Steve StoffelsIMEC
Silvia LenciIMEC
Shuzhen YouIMEC
Benoit BakerootIMEC
Nicolò RonchiIMEC
Rafael VenegasIMEC
Guido GroesenekenKU Leuven
Stefaan DecoutereIMEC

Films

Plasma SiNx

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Notes

819