Publication Information

Title:
Leakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layers
Type:
Journal
Info:
physica status solidi (a) Volume 213, Issue 5, pages 1229--1235, 2016
Date:
2016-04-13

Author Information

Name Institution
Jie HuKU Leuven
Steve StoffelsIMEC
Silvia LenciIMEC
Shuzhen YouIMEC
Benoit BakerootIMEC
Nicolò RonchiIMEC
Rafael VenegasIMEC
Guido GroesenekenKU Leuven
Stefaan DecoutereIMEC

Films

Plasma SiNx

Hardware used: Unknown


Film/Plasma Properties

Substrates

Keywords

Notes

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