Publication Information

Title:
Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
Type:
Journal
Info:
ECS Transactions, 33 (2) 365-373 (2010)
Date:
2010-07-01

Author Information

Name Institution
Sean W. KingIntel Corporation

Films

Plasma SiNx

Hardware used: Unknown

CAS#: 7803-62-5

CAS#: 7727-37-9

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Stress
Analysis: Wafer Curvature

Characteristic: Dielectric Constant, Permittivity
Analysis: Mercury Probe

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy

Substrates

Si(100)

Keywords

Notes

1352