Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane

Type:
Journal
Info:
ECS Transactions, 33 (2) 365-373 (2010)
Date:
2010-07-01
DOI:
http://dx.doi.org/10.1149/1.3485272

Author Information

Name Institution
Sean W. KingIntel Corporation

Films

Plasma SiNx

Hardware used: Unknown
SiH4, Silane
CAS#: 7803-62-5
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range = 250-400C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Stress
Analysis: Wafer Curvature
Diagnostic: -

Characteristic: Dielectric Constant, Permittivity
Analysis: Mercury Probe
Diagnostic: -

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Bede Fab200 Plus

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Siemens D5000

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Nicolet Magna-IR 860

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Bio-Rad QS-3300

Substrates

Si(100)

Notes

1352