Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
Type:
Journal
Info:
Crystals 2021, 11, 405.
Date:
2021-04-08
Author Information
| Name | Institution |
|---|---|
| Il-Hwan Hwang | Seoul National University |
| Myoung-Jin Kang | Seoul National University |
| Ho-Young Cha | Hongik University |
| Kwang-Seok Seo | Seoul National University |
Films
Plasma AlN
Other AlON
Other AlHfON
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Substrates
| Si(111) |
| GaN |
Notes
| 1685 |