Publication Information

Title:
Impacts of conduction band offset and border traps on Vth instability of gate recessed normally-off GaN MIS-HEMTs
Type:
Conference Proceedings
Info:
2014 IEEE 26th International Symposium on Power Semiconductor Devices & ICs (ISPSD)
Date:
2014-06-15

Author Information

Name Institution
Woojin ChoiSeoul National University
Hojin RyuSeoul National University
Namcheol JeonSeoul National University
Minseong LeeSeoul National University
Neung-Hee LeeSeoul National University
Kwang-Seok SeoSeoul National University
Ho-Young ChaSeoul National University

Films

Plasma SiNx

Hardware used: Unknown


Film/Plasma Properties

Substrates

AlGaN
GaN

Keywords

HEMT, High Electron Mobility Transistor
Gate Dielectric

Notes

PEALD SiNx interfacial layer for MISHEMT application.
No PEALD SiNx details provided. Perhaps ICP-CVD system used for other films.
260