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Publication Information

Title: Impacts of conduction band offset and border traps on Vth instability of gate recessed normally-off GaN MIS-HEMTs

Type: Conference Proceedings

Info: 2014 IEEE 26th International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Date: 2014-06-15

DOI: http://dx.doi.org/10.1109/ISPSD.2014.6856053

Author Information

Name

Institution

Seoul National University

Seoul National University

Seoul National University

Seoul National University

Seoul National University

Seoul National University

Seoul National University

Films

Plasma SiNx using Unknown

Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

AlGaN

GaN

Keywords

HEMT, High Electron Mobility Transistor

Gate Dielectric

Notes

PEALD SiNx interfacial layer for MISHEMT application.

No PEALD SiNx details provided. Perhaps ICP-CVD system used for other films.

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