High-performance normally off AlGaN/GaN-on-Si HEMTs with partially recessed SiNx MIS structure

Type:
Journal
Info:
physica status solidi (a) Volume 214, Issue 8, pages 1600726
Date:
2017-04-25
DOI:
http://dx.doi.org/10.1002/pssa.201600726

Author Information

Name Institution
Myoung-Jin KangSeoul National University
Minseong LeeSeoul National University
Gwang-Ho ChoiSeoul National University
Il-Hwan HwangSeoul National University
Ho-Young ChaHongik University
Kwang-Seok SeoSeoul National University

Films

Plasma SiNx

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

GaN
AlGaN
Si3N4

Keywords

Notes

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