Publication Information

Title:
Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
Type:
Journal
Info:
Materials 2020, 13, 1538
Date:
2020-03-25

Author Information

Name Institution
Hyun-Seop KimHongik University
Myoung-Jin KangSeoul National University
Jeong Jin KimHongik University
Kwang-Seok SeoSeoul National University
Ho-Young ChaHongik University

Films

Other AlON

Hardware used: Unknown


CAS#: 10028-15-6

CAS#: 7727-37-9

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

Si3N4
AlGaN

Keywords

Notes

1479