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Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate

Type:
Journal
Info:
Materials 2020, 13, 1538
Date:
2020-03-25
DOI:
http://dx.doi.org/10.3390/ma13071538

Author Information

Name Institution
Hyun-Seop KimHongik University
Myoung-Jin KangSeoul National University
Jeong Jin KimHongik University
Kwang-Seok SeoSeoul National University
Ho-Young ChaHongik University

Films

Other AlON

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O3, Ozone
CAS#: 10028-15-6
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 330C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: -

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Substrates

Si3N4
AlGaN

Notes

1479