Publication Information

Title: Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process

Type: Journal

Info: J. Mater. Chem. C, 2014,2, 5805-5811

Date: 2014-05-12

DOI: http://dx.doi.org/10.1039/C4TC00648H

Author Information

Name

Institution

Yonsei University

Films

Thermal B2O3 using Unknown

Deposition Temperature Range N/A

121-43-7

10028-15-6

Plasma B2O3 using Unknown

Deposition Temperature Range N/A

121-43-7

7782-44-7

Thermal SiO2 using Unknown

Deposition Temperature Range N/A

27804-64-4

10028-15-6

Plasma SiO2 using Unknown

Deposition Temperature Range N/A

27804-64-4

7782-44-7

Thermal B:SiO2 using Unknown

Deposition Temperature Range N/A

27804-64-4

121-43-7

10028-15-6

Plasma B:SiO2 using Unknown

Deposition Temperature Range N/A

27804-64-4

121-43-7

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Extinction Coefficient

Unknown

-

Flat Band Voltage

Unknown

-

Leakage Current

Unknown

-

Compositional Depth Profiling

SIMS, Secondary Ion Mass Spectrometry

-

Substrates

Keywords

PEALD Film Development

Doping

Notes

241



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