Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors

Type:
Journal
Info:
Thin Solid Films 558 (2014) 93 - 98
Date:
2014-02-26

Author Information

Name Institution
Matti PutkonenVTT Technical Research Centre
Markus BosundBeneq Oy
Oili M. E. YlivaaraVTT Technical Research Centre
Riikka L. PuurunenVTT Technical Research Centre
Lauri KilpiVTT Technical Research Centre
Helena RonkainenVTT Technical Research Centre
Sakari SintonenAalto University
Saima AliAalto University
Harri LipsanenAalto University
Xuwen LiuAalto University
Eero HaimiAalto University
Simo-Pekka HannulaAalto University
Timo SajavaaraUniversity of Jyväskylä
Iain BuchananAir Products
Eugene KarwackiAir Products
Mika Vähä-NissiVTT Technical Research Centre

Films

Thermal SiO2

Hardware used: Beneq TFS-200

CAS#: 0-0-0

CAS#: 10028-15-6

Thermal SiO2

Hardware used: Beneq P800

CAS#: 0-0-0

CAS#: 10028-15-6

Plasma SiO2

Hardware used: Beneq TFS-200

CAS#: 0-0-0

CAS#: 7782-44-7

Thermal SiO2


Plasma SiO2


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Uniformity
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Uniformity
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Stress
Analysis: Wafer Curvature

Characteristic: Adhesion
Analysis: Scratch Testing

Characteristic: Hardness
Analysis: Nanoindentation

Characteristic: Elastic Modulus
Analysis: Nanoindentation

Characteristic: Wetting Angle
Analysis: Contact Angle Measurement

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy

Substrates

Si(100)
Corning D263T
BSG, BoroSilicate Glass

Notes

1492