Comparative study of ALD SiO2 thin films for optical applications
Type:
Journal
Info:
Optical Materials Express, v. 6, n. 2, p. 660--670 (2016)
Date:
2016-01-18
Author Information
Name | Institution |
---|---|
Kristin Pfeiffer | Friedrich-Schiller-Universität Jena |
Svetlana Shestaeva | Fraunhofer Institute for Applied Optics and Precision Engineering |
Astrid Bingel | Friedrich-Schiller-Universität Jena |
Peter Munzert | Fraunhofer Institute for Applied Optics and Precision Engineering |
Lilit Ghazaryan | Friedrich-Schiller-Universität Jena |
Cristian Van Helvoirt | Eindhoven University of Technology |
Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
Umut T. Sanli | Max Planck Institute for Intelligent Systems |
Corinne Grévent | Max Planck Institute for Intelligent Systems |
Gisela Schütz | Max Planck Institute for Intelligent Systems |
Matti Putkonen | VTT Technical Research Centre |
Iain Buchanan | Air Products |
Lars Jensen | Laser Zentrum Hannover e.V. |
Detlev Ristau | Laser Zentrum Hannover e.V. |
Andreas Tünnermann | Friedrich-Schiller-Universität Jena |
Adriana Szeghalmi | Friedrich-Schiller-Universität Jena |
Films
Plasma SiO2
Plasma SiO2
Thermal SiO2
Film/Plasma Properties
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Optical Properties
Analysis: Optical Transmission
Characteristic: Optical Properties
Analysis: Optical Reflectivity
Characteristic: Optical Properties
Analysis: Laser Calorimetry
Substrates
Si(100) |
Ta2O5 |
Lithosil Q1 |
Glass, BK7 |
Glass, B270 |
Notes
762 |