Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
Type:
Journal
Info:
Electrochemical and Solid-State Letters, 14 (1) H1-H4 (2011)
Date:
2010-09-15
Author Information
| Name | Institution |
|---|---|
| Gijs Dingemans | Eindhoven University of Technology |
| N. M. Terlinden | Eindhoven University of Technology |
| D. Pierreux | ASM Microchemistry Oy |
| H. B. Profijt | Eindhoven University of Technology |
| Mauritius C. M. (Richard) van de Sanden | Eindhoven University of Technology |
| Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
Films
Thermal Al2O3
Thermal Al2O3
Plasma Al2O3
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Characteristic: Surface Recombination Velocity
Analysis: Photoconductance
Characteristic: Passivation
Analysis: SHG, Second Harmonic Generation
Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface State Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry
Substrates
| Silicon |
Notes
| Paper available as chapter 5 in on-line thesis. |
| Paper says Oxford Instruments and ASM ALD tools. OpAL and EmerALD are guesses. |
| 686 |