Publication Information

Title: Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3

Type: Journal

Info: Electrochemical and Solid-State Letters, 14 (1) H1-H4 (2011)

Date: 2010-09-15

DOI: http://dx.doi.org/10.1149/1.3501970

Author Information

Name

Institution

Eindhoven University of Technology

Eindhoven University of Technology

ASM Microchemistry Oy

Eindhoven University of Technology

Eindhoven University of Technology

Eindhoven University of Technology

Films

Deposition Temperature = 200C

75-24-1

7732-18-5

Thermal Al2O3 using ASM EmerALD

Deposition Temperature Range = 150-200C

75-24-1

10028-15-6

Deposition Temperature = 200C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

Unknown

Chemical Composition, Impurities

TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Unknown

Chemical Composition, Impurities

FTIR, Fourier Transform InfraRed spectroscopy

Unknown

Surface Recombination Velocity

Photoconductance

Sinton WCT-100

Passivation

SHG, Second Harmonic Generation

Unknown

Fixed Charge

C-V, Capacitance-Voltage Measurements

Unknown

Interface State Density

C-V, Capacitance-Voltage Measurements

Unknown

Density

RBS, Rutherford Backscattering Spectrometry

Unknown

Substrates

Silicon

Keywords

Passivation

Solar

Notes

Paper available as chapter 5 in on-line thesis.

Paper says Oxford Instruments and ASM ALD tools. OpAL and EmerALD are guesses.

686



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