Gijs Dingemans Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications authored by Gijs Dingemans returned 15 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
2Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
3Plasma-Assisted Atomic Layer Deposition of Low Temperature SiO2
4Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks
5'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition
6Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
7Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon
8Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
9Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
10Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties
11Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
12Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor
13Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
14Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
15Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3