Publication Information

Title:
Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3
Type:
Journal
Info:
Applied Physics Letters 96, 112101 (2010)
Date:
2010-02-04

Author Information

Name Institution
N. M. TerlindenEindhoven University of Technology
Gijs DingemansEindhoven University of Technology
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma Al2O3


Film/Plasma Properties

Characteristic: Passivation
Analysis: SHG, Second Harmonic Generation

Characteristic: Minority Carrier Lifetime
Analysis: Photoconductance

Characteristic: Surface Recombination Velocity
Analysis: Photoconductance

Substrates

Silicon

Keywords

Passivation

Notes

713