Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3

Type:
Journal
Info:
Applied Physics Letters 96, 112101 (2010)
Date:
2010-02-04
DOI:
http://dx.doi.org/10.1063/1.3334729

Author Information

Name Institution
N. M. TerlindenEindhoven University of Technology
Gijs DingemansEindhoven University of Technology
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma Al2O3

Hardware used: Oxford Instruments OpAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Passivation
Analysis: SHG, Second Harmonic Generation
Diagnostic: -

Characteristic: Minority Carrier Lifetime
Analysis: Photoconductance
Diagnostic: -

Characteristic: Surface Recombination Velocity
Analysis: Photoconductance
Diagnostic: -

Substrates

Silicon

Notes

713