Publication Information

Title: Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3

Type: Journal

Info: Applied Physics Letters 96, 112101 (2010)

Date: 2010-02-04

DOI: http://dx.doi.org/10.1063/1.3334729

Author Information

Name

Institution

Eindhoven University of Technology

Eindhoven University of Technology

Eindhoven University of Technology

Eindhoven University of Technology

Films

Deposition Temperature = 200C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Passivation

SHG, Second Harmonic Generation

-

Minority Carrier Lifetime

Photoconductance

-

Surface Recombination Velocity

Photoconductance

-

Substrates

Silicon

Keywords

Passivation

Notes

713



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