Publication Information

Title:
Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
Type:
Journal
Info:
Journal of Applied Physics 111, 093713 (2012)
Date:
2012-03-29

Author Information

Name Institution
Gijs DingemansEindhoven University of Technology
F. EinseleForschungszentrum Jülich
W. BeyerForschungszentrum Jülich
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Thermal Al2O3


Plasma Al2O3


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Lifetime
Analysis: Photoconductance

Substrates

Si(100)

Keywords

Passivation
Plasma vs Thermal Comparison

Notes

Paper available as chapter 8 in on-line thesis.
652