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Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties

Type:
Journal
Info:
Journal of The Electrochemical Society, 159 (3) H277-H285 (2012)
Date:
2011-11-08
DOI:
http://dx.doi.org/10.1149/2.067203jes

Author Information

Name Institution
Gijs DingemansEindhoven University of Technology
Cristian Van HelvoirtEindhoven University of Technology
D. PierreuxASM Microchemistry Oy
Wytze KeuningEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma SiO2

Hardware used: Oxford Instruments OpAL
BDEAS, SAM-24, Bis(diethylamino)silane, (Et2N)2SiH2
CAS#: 27804-64-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 50-400C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Gas Phase Species
Analysis: QMS, Quadrupole Mass Spectrometer
Diagnostic: -

Characteristic: Gas Phase Species
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: -

Characteristic: Minority Carrier Lifetime
Analysis: Photoconductance
Diagnostic: Sinton WCT-100

Characteristic: Surface Recombination Velocity
Analysis: Photoconductance
Diagnostic: Sinton WCT-100

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Substrates

Si(100)

Notes

660