Publication Information

Title:
Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties
Type:
Journal
Info:
Journal of The Electrochemical Society, 159 (3) H277-H285 (2012)
Date:
2011-11-08

Author Information

Name Institution
Gijs DingemansEindhoven University of Technology
Cristian Van HelvoirtEindhoven University of Technology
D. PierreuxASM Microchemistry Oy
Wytze KeuningEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma SiO2


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Morphology, Roughness, Topography
Analysis: TEM, Transmission Electron Microscope

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Gas Phase Species
Analysis: QMS, Quadrupole Mass Spectrometer

Characteristic: Gas Phase Species
Analysis: OES, Optical Emission Spectroscopy

Characteristic: Minority Carrier Lifetime
Analysis: Photoconductance

Characteristic: Surface Recombination Velocity
Analysis: Photoconductance

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

Si(100)

Keywords

Passivation

Notes

660