Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties
Type:
Journal
Info:
Journal of The Electrochemical Society, 159 (3) H277-H285 (2012)
Date:
2011-11-08
Author Information
| Name | Institution |
|---|---|
| Gijs Dingemans | Eindhoven University of Technology |
| Cristian Van Helvoirt | Eindhoven University of Technology |
| D. Pierreux | ASM Microchemistry Oy |
| Wytze Keuning | Eindhoven University of Technology |
| Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
Films
Plasma SiO2
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Morphology, Roughness, Topography
Analysis: TEM, Transmission Electron Microscope
Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Gas Phase Species
Analysis: QMS, Quadrupole Mass Spectrometer
Characteristic: Gas Phase Species
Analysis: OES, Optical Emission Spectroscopy
Characteristic: Minority Carrier Lifetime
Analysis: Photoconductance
Characteristic: Surface Recombination Velocity
Analysis: Photoconductance
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| Si(100) |
Notes
| 660 |