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Publication Information

Title: Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties

Type: Journal

Info: Journal of The Electrochemical Society, 159 (3) H277-H285 (2012)

Date: 2011-11-08

DOI: http://dx.doi.org/10.1149/2.067203jes

Author Information

Name

Institution

Eindhoven University of Technology

Eindhoven University of Technology

ASM Microchemistry Oy

Eindhoven University of Technology

Eindhoven University of Technology

Films

Deposition Temperature Range = 50-400C

27804-64-4

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Unknown

Refractive Index

Ellipsometry

Unknown

Thickness

TEM, Transmission Electron Microscope

Unknown

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

Unknown

Chemical Composition, Impurities

TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Unknown

Chemical Composition, Impurities

FTIR, Fourier Transform InfraRed spectroscopy

Unknown

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Unknown

Morphology, Roughness, Topography

TEM, Transmission Electron Microscope

Unknown

Conformality, Step Coverage

SEM, Scanning Electron Microscopy

Unknown

Gas Phase Species

QMS, Quadrupole Mass Spectrometer

Unknown

Gas Phase Species

OES, Optical Emission Spectroscopy

Unknown

Minority Carrier Lifetime

Photoconductance

Sinton WCT-100

Surface Recombination Velocity

Photoconductance

Sinton WCT-100

Interface Trap Density

C-V, Capacitance-Voltage Measurements

Unknown

Fixed Charge

C-V, Capacitance-Voltage Measurements

Unknown

Substrates

Si(100)

Keywords

Passivation

Notes

660


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