Publication Information

Title: Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties

Type: Journal

Info: Journal of The Electrochemical Society, 159 (3) H277-H285 (2012)

Date: 2011-11-08

DOI: http://dx.doi.org/10.1149/2.067203jes

Author Information

Name

Institution

Eindhoven University of Technology

Eindhoven University of Technology

ASM Microchemistry Oy

Eindhoven University of Technology

Eindhoven University of Technology

Films

Deposition Temperature Range = 50-400C

27804-64-4

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

-

Refractive Index

Ellipsometry

-

Thickness

TEM, Transmission Electron Microscope

-

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

-

Chemical Composition, Impurities

TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

-

Chemical Composition, Impurities

FTIR, Fourier Transform InfraRed spectroscopy

-

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

-

Morphology, Roughness, Topography

TEM, Transmission Electron Microscope

-

Conformality, Step Coverage

SEM, Scanning Electron Microscopy

-

Gas Phase Species

QMS, Quadrupole Mass Spectrometer

-

Gas Phase Species

OES, Optical Emission Spectroscopy

-

Minority Carrier Lifetime

Photoconductance

Sinton WCT-100

Surface Recombination Velocity

Photoconductance

Sinton WCT-100

Interface Trap Density

C-V, Capacitance-Voltage Measurements

-

Fixed Charge

C-V, Capacitance-Voltage Measurements

-

Substrates

Si(100)

Keywords

Passivation

Notes

660



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