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Publication Information

Title: Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition

Type: Journal

Info: physica status solidi (RRL) - Rapid Research Letters Volume 4, Issue 1-2, pages 10--12, 2010

Date: 2009-10-27

DOI: http://dx.doi.org/10.1002/pssr.200903334

Author Information

Name

Institution

Eindhoven University of Technology

Q-CELLS SE

Q-CELLS SE

Eindhoven University of Technology

Eindhoven University of Technology

Films

Deposition Temperature = 200C

75-24-1

7782-44-7

Deposition Temperature = 200C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Refractive Index

Ellipsometry

Unknown

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

Unknown

Chemical Composition, Impurities

TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Unknown

Passivation

Photoconductance

Sinton WCT-100

Minority Carrier Lifetime

Photoconductance

Sinton WCT-100

Surface Recombination Velocity

Photoconductance

Sinton WCT-100

Substrates

Si(100)

Keywords

Passivation

Notes

715



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