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Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
Type:
Journal
Info:
physica status solidi (RRL) - Rapid Research Letters Volume 4, Issue 1-2, pages 10--12, 2010
Date:
2009-10-27
Author Information
| Name | Institution |
|---|---|
| Gijs Dingemans | Eindhoven University of Technology |
| R. Seguin | Q-CELLS SE |
| P. Engelhart | Q-CELLS SE |
| Mauritius C. M. (Richard) van de Sanden | Eindhoven University of Technology |
| Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
Films
Thermal Al2O3
Plasma Al2O3
Film/Plasma Properties
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Characteristic: Passivation
Analysis: Photoconductance
Characteristic: Minority Carrier Lifetime
Analysis: Photoconductance
Characteristic: Surface Recombination Velocity
Analysis: Photoconductance
Substrates
| Si(100) |
Notes
| 715 |