Publication Information

Title:
Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
Type:
Journal
Info:
Electrochemical and Solid-State Letters, 13(3) H76-H79 (2010)
Date:
2009-11-30

Author Information

Name Institution
Gijs DingemansEindhoven University of Technology
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma Al2O3


Thermal Al2O3


Plasma Al2O3


Thermal Al2O3


Film/Plasma Properties

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Surface Recombination Velocity
Analysis: Lifetime Testing

Substrates

Si(100)

Keywords

Passivation
Solar
Plasma vs Thermal Comparison

Notes

Plasma and thermal ALD Al2O3 Oxford Instruments FlexAL and OpAL study for silicon PV passivation.
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