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Publication Information

Title: Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD

Type: Journal

Info: Electrochemical and Solid-State Letters, 13(3) H76-H79 (2010)

Date: 2009-11-30

DOI: http://dx.doi.org/10.1149/1.3276040

Author Information

Name

Institution

Eindhoven University of Technology

Eindhoven University of Technology

Eindhoven University of Technology

Films

Deposition Temperature Range = 50-400C

75-24-1

7782-44-7

Deposition Temperature Range = 100-400C

75-24-1

7732-18-5

Deposition Temperature Range = 50-400C

75-24-1

7782-44-7

Deposition Temperature Range = 100-300C

75-24-1

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Refractive Index

Ellipsometry

Unknown

Thickness

Ellipsometry

Unknown

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

Unknown

Chemical Composition, Impurities

TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Unknown

Surface Recombination Velocity

Lifetime Testing

Sinton WCT-100

Substrates

Si(100)

Keywords

Passivation

Solar

Plasma vs Thermal Comparison

Notes

Plasma and thermal ALD Al2O3 Oxford Instruments FlexAL and OpAL study for silicon PV passivation.

187



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