Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 30, 040802 (2012)
Date:
2012-05-25

Author Information

Name Institution
Gijs DingemansEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma Al2O3


Thermal Al2O3


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Gas Phase Species
Analysis: OES, Optical Emission Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Lifetime
Analysis: Photoconductance

Characteristic: Interface Trap Density
Analysis: Photoconductance

Characteristic: Fixed Charge Density
Analysis: Photoconductance

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy

Substrates

Silicon

Keywords

Passivation
Solar

Notes

Images of blistering.
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