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Publication Information

Title: Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells

Type: Journal

Info: Journal of Vacuum Science & Technology A 30, 040802 (2012)

Date: 2012-05-25

DOI: http://dx.doi.org/10.1116/1.4728205

Author Information

Name

Institution

Eindhoven University of Technology

Eindhoven University of Technology

Films

Deposition Temperature Range = 50-400C

75-24-1

7782-44-7

Deposition Temperature Range = 100-400C

75-24-1

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Unknown

Gas Phase Species

OES, Optical Emission Spectroscopy

Unknown

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

Unknown

Lifetime

Photoconductance

Unknown

Interface Trap Density

Photoconductance

Unknown

Negative Fixed Charge Density

Photoconductance

Unknown

Images

SEM, Scanning Electron Microscopy

Unknown

Substrates

Silicon

Keywords

Passivation

Solar

Notes

Images of blistering.

667


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