Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks

Type:
Journal
Info:
Applied Physics Letters 97, 152106 (2010)
Date:
2010-09-14

Author Information

Name Institution
Gijs DingemansEindhoven University of Technology
W. BeyerForschungszentrum J├╝lich
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma Al2O3


Film/Plasma Properties

Characteristic: Compositional Depth Profiling
Analysis: SIMS, Secondary Ion Mass Spectrometry

Characteristic: Thermal Stability
Analysis: Thermal Effusion

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Surface Recombination Velocity
Analysis: Photoconductance

Substrates

SiO2

Keywords

Passivation
Solar

Notes

Paper available as chapter 6 in on-line thesis.
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