Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks

Type:
Journal
Info:
Applied Physics Letters 97, 152106 (2010)
Date:
2010-09-14
DOI:
http://dx.doi.org/10.1063/1.3497014

Author Information

Name Institution
Gijs DingemansEindhoven University of Technology
W. BeyerForschungszentrum Jülich
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma Al2O3

Hardware used: Unknown
Al(CD3)3, deuterated trimethyl aluminum, deuterated TMA
CAS#: 0-0-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Compositional Depth Profiling
Analysis: SIMS, Secondary Ion Mass Spectrometry
Diagnostic: -

Characteristic: Thermal Stability
Analysis: Thermal Effusion
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Characteristic: Surface Recombination Velocity
Analysis: Photoconductance
Diagnostic: Sinton WCT-100

Substrates

SiO2

Notes

Paper available as chapter 6 in on-line thesis.
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