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An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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Al(CD3)3, deuterated trimethyl aluminum, deuterated TMA, CAS# 0-0-0

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 1 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks