Publication Information

Title: Plasma-Assisted Atomic Layer Deposition of Low Temperature SiO2

Type: Journal

Info: ECS Transactions, 35 (4) 191-204 (2011)

Date: 2011-05-03

DOI: http://dx.doi.org/10.1149/1.3572283

Author Information

Name

Institution

Eindhoven University of Technology

Eindhoven University of Technology

Eindhoven University of Technology

Eindhoven University of Technology

Films

Deposition Temperature Range = 50-400C

27804-64-4

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Unknown

Refractive Index

Ellipsometry

Unknown

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

Unknown

Chemical Composition, Impurities

TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Unknown

Chemical Composition, Impurities

FTIR, Fourier Transform InfraRed spectroscopy

Unknown

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Unknown

Morphology, Roughness, Topography

TEM, Transmission Electron Microscope

Unknown

Gas Phase Species

QMS, Quadrupole Mass Spectrometer

Unknown

Plasma Species

OES, Optical Emission Spectroscopy

Unknown

Minority Carrier Lifetime

Lifetime Testing

Sinton WCT-100

Substrates

Keywords

Notes

354



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