Publication Information

Title: Plasma-Assisted Atomic Layer Deposition of Low Temperature SiO2

Type: Journal

Info: ECS Transactions, 35 (4) 191-204 (2011)

Date: 2011-05-03

DOI: http://dx.doi.org/10.1149/1.3572283

Author Information

Name

Institution

Eindhoven University of Technology

Eindhoven University of Technology

Eindhoven University of Technology

Eindhoven University of Technology

Films

Deposition Temperature Range = 50-400C

27804-64-4

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

-

Refractive Index

Ellipsometry

-

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

-

Chemical Composition, Impurities

TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

-

Chemical Composition, Impurities

FTIR, Fourier Transform InfraRed spectroscopy

-

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

-

Morphology, Roughness, Topography

TEM, Transmission Electron Microscope

-

Gas Phase Species

QMS, Quadrupole Mass Spectrometer

-

Plasma Species

OES, Optical Emission Spectroscopy

-

Minority Carrier Lifetime

Lifetime Testing

Sinton WCT-100

Substrates

Keywords

Notes

354



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