Publication Information

Title: Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition

Type: Journal

Info: Journal of Applied Physics 110, 093715 (2011)

Date: 2011-09-29

DOI: http://dx.doi.org/10.1063/1.3658246

Author Information

Name

Institution

Eindhoven University of Technology

Eindhoven University of Technology

Eindhoven University of Technology

Eindhoven University of Technology

Eindhoven University of Technology

Films

Plasma SiO2 using Unknown

Deposition Temperature = 200C

27804-64-4

7782-44-7

Plasma Al2O3 using Unknown

Deposition Temperature = 200C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

-

Passivation

SHG, Second Harmonic Generation

Custom

Interface Trap Density

C-V, Capacitance-Voltage Measurements

-

Fixed Charge Density

C-V, Capacitance-Voltage Measurements

-

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

-

Lifetime

Photoconductance

Sinton WCT-100

Surface Recombination Velocity

Photoconductance

Sinton WCT-100

Thickness

Ellipsometry

-

Images

TEM, Transmission Electron Microscope

-

Substrates

Si(100)

Keywords

Passivation

Solar

Notes

Paper available as chapter 7 in on-line thesis.

681



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