Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition

Type:
Journal
Info:
Journal of Applied Physics 110, 093715 (2011)
Date:
2011-09-29
DOI:
http://dx.doi.org/10.1063/1.3658246

Author Information

Name Institution
Gijs DingemansEindhoven University of Technology
N. M. TerlindenEindhoven University of Technology
Marcel A. VerheijenEindhoven University of Technology
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma SiO2

Hardware used: Unknown
BDEAS, SAM-24, Bis(diethylamino)silane, (Et2N)2SiH2
CAS#: 27804-64-4
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Passivation
Analysis: SHG, Second Harmonic Generation
Diagnostic: Custom

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Fixed Charge Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Lifetime
Analysis: Photoconductance
Diagnostic: Sinton WCT-100

Characteristic: Surface Recombination Velocity
Analysis: Photoconductance
Diagnostic: Sinton WCT-100

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Substrates

Si(100)

Notes

Paper available as chapter 7 in on-line thesis.
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