Publication Information

Title:
Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
Type:
Journal
Info:
Journal of Applied Physics 110, 093715 (2011)
Date:
2011-09-29

Author Information

Name Institution
Gijs DingemansEindhoven University of Technology
N. M. TerlindenEindhoven University of Technology
Marcel A. VerheijenEindhoven University of Technology
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma SiO2


Plasma Al2O3


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Passivation
Analysis: SHG, Second Harmonic Generation

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Fixed Charge Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Lifetime
Analysis: Photoconductance

Characteristic: Surface Recombination Velocity
Analysis: Photoconductance

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Substrates

Si(100)

Keywords

Passivation
Solar

Notes

Paper available as chapter 7 in on-line thesis.
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