Publication Information

Title:
Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon
Type:
Journal
Info:
JOURNAL OF APPLIED PHYSICS 106, 114907(2009)
Date:
2009-10-22

Author Information

Name Institution
Gijs DingemansEindhoven University of Technology
P. EngelhartQ-CELLS SE
R. SeguinQ-CELLS SE
F. EinseleForschungszentrum Jülich
Bram HoexEindhoven University of Technology
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma Al2O3


Plasma Al2O3


Film/Plasma Properties

Characteristic: Minority Carrier Lifetime
Analysis: Lifetime Testing

Characteristic: Surface Recombination Velocity
Analysis: Lifetime Testing

Characteristic: Thermal Effusion
Analysis: Thermal Effusion

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Substrates

Silicon

Keywords

Passivation

Notes

147