Publication Information

Title:
Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon
Type:
Journal
Info:
JOURNAL OF APPLIED PHYSICS 106, 114907(2009)
Date:
2009-10-22

Author Information

Name Institution
Gijs DingemansEindhoven University of Technology
P. EngelhartQ-CELLS SE
R. SeguinQ-CELLS SE
F. EinseleForschungszentrum J├╝lich
Bram HoexEindhoven University of Technology
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma Al2O3


Plasma Al2O3


Film/Plasma Properties

Characteristic: Minority Carrier Lifetime
Analysis: Lifetime Testing

Characteristic: Surface Recombination Velocity
Analysis: Lifetime Testing

Characteristic: Thermal Effusion
Analysis: Thermal Effusion

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Substrates

Silicon

Keywords

Passivation

Notes

147