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Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon
Type:
Journal
Info:
JOURNAL OF APPLIED PHYSICS 106, 114907(2009)
Date:
2009-10-22
Author Information
| Name | Institution |
|---|---|
| Gijs Dingemans | Eindhoven University of Technology |
| P. Engelhart | Q-CELLS SE |
| R. Seguin | Q-CELLS SE |
| F. Einsele | Forschungszentrum Jülich |
| Bram Hoex | Eindhoven University of Technology |
| Mauritius C. M. (Richard) van de Sanden | Eindhoven University of Technology |
| Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
Films
Plasma Al2O3
Plasma Al2O3
Film/Plasma Properties
Characteristic: Minority Carrier Lifetime
Analysis: Lifetime Testing
Characteristic: Surface Recombination Velocity
Analysis: Lifetime Testing
Characteristic: Thermal Effusion
Analysis: Thermal Effusion
Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Substrates
| Silicon |
Notes
| 147 |