Publication Information

Title: Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon

Type: Journal

Info: JOURNAL OF APPLIED PHYSICS 106, 114907(2009)

Date: 2009-10-22

DOI: http://dx.doi.org/10.1063/1.3264572

Author Information

Name

Institution

Eindhoven University of Technology

Q-CELLS SE

Q-CELLS SE

Forschungszentrum J├╝lich

Eindhoven University of Technology

Eindhoven University of Technology

Eindhoven University of Technology

Films

Deposition Temperature = 200C

75-24-1

7782-44-7

Deposition Temperature = 200C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Minority Carrier Lifetime

Lifetime Testing

Sinton WCT-120 Lifetime Tester

Surface Recombination Velocity

Lifetime Testing

Sinton WCT-120 Lifetime Tester

Thermal Effusion

Thermal Effusion

Unknown

Chemical Composition, Impurities

FTIR, Fourier Transform InfraRed spectroscopy

Unknown

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

Unknown

Chemical Composition, Impurities

TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Unknown

Substrates

Silicon

Keywords

Passivation

Notes

147



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