Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon

Type:
Journal
Info:
JOURNAL OF APPLIED PHYSICS 106, 114907(2009)
Date:
2009-10-22
DOI:
http://dx.doi.org/10.1063/1.3264572

Author Information

Name Institution
Gijs DingemansEindhoven University of Technology
P. EngelhartQ-CELLS SE
R. SeguinQ-CELLS SE
F. EinseleForschungszentrum Jülich
Bram HoexEindhoven University of Technology
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma Al2O3

Hardware used: Oxford Instruments FlexAL
TMA, trimethyl aluminum, AlMe3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Plasma Al2O3

Hardware used: Oxford Instruments OpAL
TMA, trimethyl aluminum, AlMe3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Minority Carrier Lifetime
Analysis: Lifetime Testing
Diagnostic: Sinton WCT-120 Lifetime Tester

Characteristic: Surface Recombination Velocity
Analysis: Lifetime Testing
Diagnostic: Sinton WCT-120 Lifetime Tester

Characteristic: Thermal Effusion
Analysis: Thermal Effusion
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Substrates

Silicon

Keywords

Passivation

Notes

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