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'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition

Type:
Journal
Info:
Solar Energy Materials and Solar Cells, Volume 143, 2015, Pages 450 - 456
Date:
2015-07-27
DOI:
http://dx.doi.org/10.1016/j.solmat.2015.07.040

Author Information

Name Institution
B. W. H. van de LooEindhoven University of Technology
Harm C. M. KnoopsEindhoven University of Technology
Gijs DingemansASM Microchemistry Oy
G.J.M. JanssenECN Solar Energy
M.W.P.E. LamersECN Solar Energy
I.G. RomijnECN Solar Energy
A.W. WeeberECN Solar Energy
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma SiO2

Hardware used: Oxford Instruments OpAL
BDEAS, SAM-24, Bis(diethylamino)silane, (Et2N)2SiH2
CAS#: 27804-64-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Plasma Al2O3

Hardware used: Oxford Instruments OpAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Substrates

Silicon

Notes

555