Publication Information

Title:
Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
Type:
Journal
Info:
Journal of Vacuum Science & Technology B 36, 062901 (2018)
Date:
2018-09-05

Author Information

Name Institution
Vladimir KolkovskyFraunhofer IPMS
Sebastian ScholzFraunhofer IPMS
Valery KolkovskyTechnische Universit├Ąt Dresden
Jan-Uwe SchmidtFraunhofer IPMS
Rene HellerInstitute of Ion Beam Physics and Materials Research

Films



Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Compositional Depth Profiling
Analysis: NRA, Nuclear Reaction Analysis

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Conductance
Analysis: I-V, Current-Voltage Measurements

Substrates

SiO2

Keywords

Notes

1292