Publication Information

Title:
Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
Type:
Journal
Info:
Journal of The Electrochemical Society, 155 (3) G51-G55 (2008)
Date:
2007-10-24

Author Information

Name Institution
Kung Ming FanChang Gung University
Chao Sung LaiChang Gung University
Hsing Kan PengChang Gung University
Shian Jyh LinNanya Technology Corporation
Chung Yuan LeeNanya Technology Corporation

Films

Thermal Al2O3


Other AlOF


Film/Plasma Properties

Characteristic: Compositional Depth Profiling
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Breakdown Voltage Lifetime
Analysis: I-V, Current-Voltage Measurements

Characteristic: CET, capacitance equivalent thickness
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

SiOxNy

Keywords

Notes

1178