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Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
Type:
Journal
Info:
Journal of The Electrochemical Society, 155 (3) G51-G55 (2008)
Date:
2007-10-24
Author Information
| Name | Institution |
|---|---|
| Kung Ming Fan | Chang Gung University |
| Chao Sung Lai | Chang Gung University |
| Hsing Kan Peng | Chang Gung University |
| Shian Jyh Lin | Nanya Technology Corporation |
| Chung Yuan Lee | Nanya Technology Corporation |
Films
Film/Plasma Properties
Characteristic: Compositional Depth Profiling
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Breakdown Voltage Lifetime
Analysis: I-V, Current-Voltage Measurements
Characteristic: CET, capacitance equivalent thickness
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| SiOxNy |
Notes
| 1178 |