Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash

Type:
Journal
Info:
Adv. Mater. 2015 27(25) 3811--3816
Date:
2015-04-10

Author Information

Name Institution
Jung Ho YoonSeoul National University
Kyung Min KimHewlett-Packard
Seul Ji SongSeoul National University
Jun Yeong SeokSeoul National University
Kyung Jean YoonSeoul National University
Dae Eun KwonSeoul National University
Tae Hyung ParkSeoul National University
Young Jae KwonSeoul National University
Xinglong ShaoSeoul National University
Cheol Seong HwangSeoul National University

Films

Plasma Ta2O5


Thermal HfO2


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Substrates

Ti
HfO2

Notes

356