Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash

Type:
Journal
Info:
Adv. Mater. 2015 27(25) 3811--3816
Date:
2015-04-10
DOI:
http://dx.doi.org/10.1002/adma.201501167

Author Information

Name Institution
Jung Ho YoonSeoul National University
Kyung Min KimHewlett-Packard
Seul Ji SongSeoul National University
Jun Yeong SeokSeoul National University
Kyung Jean YoonSeoul National University
Dae Eun KwonSeoul National University
Tae Hyung ParkSeoul National University
Young Jae KwonSeoul National University
Xinglong ShaoSeoul National University
Cheol Seong HwangSeoul National University

Films

Plasma Ta2O5

Hardware used: Unknown
(tert-butylimino)bis(diethylamino)cyclopentadienyltantalum
CAS#: 852212-55-6
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature = 200C

Thermal HfO2

Hardware used: Unknown
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
Where to buy precursor
O3, Ozone
CAS#: 10028-15-6
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Gaertner L116D

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: Perkin Elmer 660

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo VG Sigma Probe

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Technai F20

Substrates

Ti
HfO2

Notes

356