Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor

Type:
Journal
Info:
Chem. Mater., 2015, 27 (10), pp 3628-3635
Date:
2015-05-05
DOI:
http://dx.doi.org/10.1021/acs.chemmater.5b00255

Author Information

Name Institution
Felix MattelaerGhent University
Philippe M VereeckenGhent University
Jolien DendoovenGhent University
Christophe DetavernierGhent University

Films

Thermal MnOx

Hardware used: Custom Remote Inductively Coupled Plasma
Mn(TMHD)3, tris(2,2,6,6-tetramethyl-3,5-heptanedionato) manganese
CAS#: 14324-99-3
Where to buy precursor
O3, Ozone
CAS#: 10028-15-6
Deposition Temperature Range = 150-250C

Plasma MnOx

Hardware used: Custom Remote Inductively Coupled Plasma
Mn(TMHD)3, tris(2,2,6,6-tetramethyl-3,5-heptanedionato) manganese
CAS#: 14324-99-3
Where to buy precursor
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Deposition Temperature = 180C

Plasma MnOx

Hardware used: Custom Remote Inductively Coupled Plasma
Mn(TMHD)3, tris(2,2,6,6-tetramethyl-3,5-heptanedionato) manganese
CAS#: 14324-99-3
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 180C

Plasma Did Not Work

Hardware used: Custom Remote Inductively Coupled Plasma
Mn(TMHD)3, tris(2,2,6,6-tetramethyl-3,5-heptanedionato) manganese
CAS#: 14324-99-3
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 180C

Plasma Did Not Work

Hardware used: Custom Remote Inductively Coupled Plasma
Mn(TMHD)3, tris(2,2,6,6-tetramethyl-3,5-heptanedionato) manganese
CAS#: 14324-99-3
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 180C

Plasma MnOx

Hardware used: Custom Remote Inductively Coupled Plasma
Mn(TMHD)3, tris(2,2,6,6-tetramethyl-3,5-heptanedionato) manganese
CAS#: 14324-99-3
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range = 140-280C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Bruker D8 Discover

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Bruker D8 Discover

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Bruker Dimension Edge

Characteristic: Electrochemical Performance
Analysis: Galvanostatic Cycling
Diagnostic: Metrohm Autolab PGSTAT302

Characteristic: Electrochemical Performance
Analysis: CV, Cyclic Voltammetry
Diagnostic: Metrohm Autolab PGSTAT302

Characteristic: Unknown
Analysis: XRF, X-Ray Fluorescence
Diagnostic: -

Substrates

SiO2
TiN

Notes

N2 plasma gave films with mostly C and N.
O2 plasma gave non-uniform films without saturation up to 120 seconds.
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