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Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
Hydrogen-plasma-assisted hybrid atomic layer deposition of Ir thin film as novel Cu diffusion barrier
Self-limiting diamond growth from alternating CFx and H fluxes
Sub-10-nm ferroelectric Gd-doped HfO2 layers
Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
Type:
Journal
Info:
Chem. Mater., 2015, 27 (10), pp 3628-3635
Date:
2015-05-05
Author Information
| Name | Institution |
|---|---|
| Felix Mattelaer | Ghent University |
| Philippe M Vereecken | Ghent University |
| Jolien Dendooven | Ghent University |
| Christophe Detavernier | Ghent University |
Films
Thermal MnOx
Plasma MnOx
Plasma MnOx
Plasma Did Not Work
Plasma Did Not Work
Plasma MnOx
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Electrochemical Performance
Analysis: Galvanostatic Cycling
Characteristic: Electrochemical Performance
Analysis: CV, Cyclic Voltammetry
Characteristic: Unknown
Analysis: XRF, X-Ray Fluorescence
Substrates
| SiO2 |
| TiN |
Keywords
| Batteries |
| Lithium-ion |
| PEALD Film Development |
Notes
| N2 plasma gave films with mostly C and N. |
| O2 plasma gave non-uniform films without saturation up to 120 seconds. |
| 317 |