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Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2015, 7 (28), pp 15587-15592
Date:
2015-06-30
Author Information
| Name | Institution |
|---|---|
| Ji-Hoon Ahn | Korean Basic Science Institute |
| Se-Hun Kwon | Pusan National University |
Films
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
| TiN |
Notes
| 371 |