Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode

Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2015, 7 (28), pp 15587-15592
Date:
2015-06-30

Author Information

Name Institution
Ji-Hoon AhnKorean Basic Science Institute
Se-Hun KwonPusan National University

Films



Plasma TiN


Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

TiN

Keywords

Notes

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