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High wet-etch resistance SiO2 films deposited by plasma-enhanced atomic layer deposition with 1,1,1-tris(dimethylamino)disilane

Type:
Journal
Info:
J. Vac. Sci. Technol. A 40(2) Mar/Apr 2022
Date:
2022-01-13
DOI:
http://dx.doi.org/10.1116/6.0001519

Author Information

Name Institution
Su Min HwangUniversity of Texas at Dallas
Harrison Sejoon KimUniversity of Texas at Dallas
Dan N. LeUniversity of Texas at Dallas
Akshay SahotaUniversity of Texas at Dallas
Jaebeom LeeUniversity of Texas at Dallas
Yong Chan JungUniversity of Texas at Dallas
Sang Woo KimInha University
Si Joon KimKangwon National University
Rino ChoiInha University
Jinho AhnHanyang University
Byung Keun HwangDuPont
Xiaobing ZhouDuPont
Jiyoung KimUniversity of Texas at Dallas

Films

Thermal SiO2

Hardware used: Rocky Mountain Vacuum Tech
TADS, 1,1,1-tris(dimethylamino)disilane, [(H3C)2N]3Si2H3
CAS#: 2273763-87-2
O3, Ozone
CAS#: 10028-15-6
Deposition Temperature Range = 100-400C

Plasma SiO2

Hardware used: Rocky Mountain Vacuum Tech
TADS, 1,1,1-tris(dimethylamino)disilane, [(H3C)2N]3Si2H3
CAS#: 2273763-87-2
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 100-475C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000DI

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Rigaku Smartlab

Characteristic: Wet Etch Resistance
Analysis: -
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: PHI Versaprobe II

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Nicolet 4700 FT-IR

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2100F

Substrates

Si(100)

Notes

1698