High wet-etch resistance SiO2 films deposited by plasma-enhanced atomic layer deposition with 1,1,1-tris(dimethylamino)disilane
Type:
Journal
Info:
J. Vac. Sci. Technol. A 40(2) Mar/Apr 2022
Date:
2022-01-13
Author Information
| Name | Institution |
|---|---|
| Su Min Hwang | University of Texas at Dallas |
| Harrison Sejoon Kim | University of Texas at Dallas |
| Dan N. Le | University of Texas at Dallas |
| Akshay Sahota | University of Texas at Dallas |
| Jaebeom Lee | University of Texas at Dallas |
| Yong Chan Jung | University of Texas at Dallas |
| Sang Woo Kim | Inha University |
| Si Joon Kim | Kangwon National University |
| Rino Choi | Inha University |
| Jinho Ahn | Hanyang University |
| Byung Keun Hwang | DuPont |
| Xiaobing Zhou | DuPont |
| Jiyoung Kim | University of Texas at Dallas |
Films
Thermal SiO2
Plasma SiO2
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Wet Etch Resistance
Analysis: -
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Substrates
| Si(100) |
Notes
| 1698 |