High wet-etch resistance SiO2 films deposited by plasma-enhanced atomic layer deposition with 1,1,1-tris(dimethylamino)disilane
Type:
Journal
Info:
J. Vac. Sci. Technol. A 40(2) Mar/Apr 2022
Date:
2022-01-13
Author Information
Name | Institution |
---|---|
Su Min Hwang | University of Texas at Dallas |
Harrison Sejoon Kim | University of Texas at Dallas |
Dan N. Le | University of Texas at Dallas |
Akshay Sahota | University of Texas at Dallas |
Jaebeom Lee | University of Texas at Dallas |
Yong Chan Jung | University of Texas at Dallas |
Sang Woo Kim | Inha University |
Si Joon Kim | Kangwon National University |
Rino Choi | Inha University |
Jinho Ahn | Hanyang University |
Byung Keun Hwang | DuPont |
Xiaobing Zhou | DuPont |
Jiyoung Kim | University of Texas at Dallas |
Films
Thermal SiO2
Plasma SiO2
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Wet Etch Resistance
Analysis: -
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Substrates
Si(100) |
Notes
1698 |