Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

Contact us for more information.


TADS, 1,1,1-tris(dimethylamino)disilane, [(H3C)2N]3Si2H3, CAS# 2273763-87-2

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1High wet-etch resistance SiO2 films deposited by plasma-enhanced atomic layer deposition with 1,1,1-tris(dimethylamino)disilane